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Ve311 Lab #2

Note:
(1) Please use A4 size papers.
(2) The lab report should be submitted online individually.
(3) Use Proteus 8.10 for simulation before the lab session. In the Proteus
library, you should be able to find all the components used in the schematics.
The lab report must include both the simulation and measurement
results.
1. [Common-Emitter Amplifier]
(a) [40%] Design and build a common-emitter amplifier in Proteus and
on the breadboard which has a voltage gain Aυ > 10, using npn BJT
2N3904. Plot VOUT vs VIN . (Hint: First choose an appropriate RC .
Second, perform DC sweep to find out a VIN at which the magnitude
of slope is more than 10. At the same time, make sure the BJT is in
the forward-active region. If not working, change for another RC and
repeat the DC sweep analysis again.)
(b) [30%] For Vin = VIN + 0.01sin(2π102
∙ time) , plot Vout = VOUT +
υout vs time. Confirm that the amplitude of υout is equal to 0.01 ×
Aυ.
(c) [30%] For Vin = VIN + 0.01sin(2π107
∙ time) , plot Vout = VOUT +
υout vs time. Is the amplitude of υout still equal to 0.01 × Aυ? If not,
explain the possible reasons.
2
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 8
1 Publication Order Number:
2N3903/D
2N3903, 2N3904
General Purpose
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 40 Vdc
Collector−Base Voltage VCBO 60 Vdc
Emitter−Base Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC 200 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (Note 1)
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RJA 200 °C/W
Thermal Resistance, Junction−to−Case RJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates Data in addition to JEDEC Requirements.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING DIAGRAMS
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
COLLECTOR
3
2
BASE
1
EMITTER
2N
390x
YWW

x = 3 or 4
Y = Year
WW = Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
1 2 3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
2N3903, 2N3904
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc
Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 − Vdc
Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 − Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3903
2N3904
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3903
2N3904
(IC = 10 mAdc, VCE = 1.0 Vdc) 2N3903
2N3904
(IC = 50 mAdc, VCE = 1.0 Vdc) 2N3903
2N3904
(IC = 100 mAdc, VCE = 1.0 Vdc) 2N3903
2N3904
hFE
20
40
35
70
50
100
30
60
15
30




150
300





Collector−Emitter Saturation Voltage (Note 2)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)


0.2
0.3
Vdc
Base−Emitter Saturation Voltage (Note 2)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
0.65

0.85
0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3903
2N3904
fT
250
300


MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903
2N3904
hie
1.0
1.0
8.0
10
k 
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903
2N3904
hre
0.1
0.5
5.0
8.0
X 10−4
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903
2N3904
hfe
50
100
200
400

Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 40 mhos
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) 2N3903
2N3904
NF


6.0
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
td − 35 ns
Rise Time tr − 35 ns
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, 2N3903
IB1 = IB2 = 1.0 mAdc) 2N3904
ts −

175
200
ns
Fall Time tf − 50 ns
2. Pulse Test: Pulse Width 300 s; Duty Cycle 2%.
2N3903, 2N3904
http://onsemi.com
3
ORDERING INFORMATION
Device Package Shipping†
2N3903RLRM TO−92 2000 / Ammo Pack
2N3904 TO−92 5000 Units / Bulk
2N3904G TO−92
(Pb−Free)
5000 Units / Bulk
2N3904RLRA TO−92 2000 / Tape & Reel
2N3904RLRAG TO−92
(Pb−Free)
2000 / Tape & Reel
2N3904RLRM TO−92 2000 / Ammo Pack
2N3904RLRMG TO−92
(Pb−Free)
2000 / Ammo Pack
2N3904RLRP TO−92 2000 / Ammo Pack
2N3904RLRPG TO−92
(Pb−Free)
2000 / Ammo Pack
2N3904RL1G TO−92
(Pb−Free)
2000 / Tape & Reel
2N3904ZL1 TO−92 2000 / Ammo Pack
2N3904ZL1G TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Figure 1. Delay and Rise Time Equivalent Test Circuit
Figure 2. Storage and Fall Time Equivalent Test Circuit
+3 V
275
10 k
1N916 CS < 4 pF*
+3 V
275
10 k
< 1 ns CS < 4 pF*
-0.5 V
+10.9 V 300 ns
DUTY CYCLE = 2%
< 1 ns -9.1 V′
+10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 s
* Total shunt capacitance of test jig and connectors
* Total shunt capacitance of test jig and connectors
2N3903, 2N3904
http://onsemi.com
4
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40
QT
QA
Cibo
Cobo
TJ = 25°C
TJ = 125°C
Figure 5. Turn−On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
Figure 6. Rise Time
IC, COLLECTOR CURRENT (mA)
TIME (ns)
1.0 2.0 3.0 10 20 70
5
100
t , RISE TIME (ns)
Figure 7. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
IC, COLLECTOR CURRENT (mA)
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5
5.0 7.0 30 50 100 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5
5.0 7.0 30 50 100 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5
5.0 7.0 30 50 100 200
10
30
7
20
r t , FALL TIME (ns) f
t , STORAGE TIME (ns) ′
s
VCC = 40 V
IC/IB = 10
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
IC/IB = 10
IC/IB = 20
IC/IB = 20 IC/IB = 10
t′s = ts – 1/8 tf
IB1 = IB2
2N3903, 2N3904
http://onsemi.com
5
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
Figure 9.
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 10.
RS, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
0.2 0.4 1.0 2.0 4.0 10 20 40
0
100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20 0.2 0.4 40 100
NF, NOISE FIGURE (dB)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50 A
IC = 100 A
SOURCE RESISTANCE = 200 
IC = 1.0 mA
SOURCE RESISTANCE = 200 
IC = 0.5 mA
SOURCE RESISTANCE = 500 
IC = 100 A
SOURCE RESISTANCE = 1.0 k
IC = 50 A
Figure 11. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 12. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 13. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5
0.3 0.5 3.0 10
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe h , VOLTAGE FEEDBACK RATIO (X 10 ) re
h , INPUT IMPEDANCE (k OHMS) ie
0.1 0.2 1.0 2.0 0.3 0.5 3.0 5.0 10
0.1 0.2 1.0 2.0 0.3 0.5 3.0 5.0 10
2
1
0.1 0.2 1.0 2.0 0.3 0.5 3.0 5.0 10
fe
-4
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
2N3903, 2N3904
http://onsemi.com
6
TYPICAL STATIC CHARACTERISTICS
Figure 15. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.2 0.3 0.5 2.0 3.0 10 50 70
0.1
0.7 1.0 5.0 7.0 20 30 100 200
FE
TJ = +125°C VCE = 1.0 V
+25°C
-55°C
Figure 16. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.2 0.3 0.5 2.0 3.0 10
0
0.7 5.0 7.0 1.0
CE
IC = 1.0 mA
TJ = 25°C
0.01 0.02 0.03 0.05 0.07
10 mA 30 mA 100 mA
Figure 17. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 18. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0
100
-0.5
0
0.5
1.0
0 60 80 120 140 160 20 40 100 180
COEFFICIENT (mV/ C)
200
-1.0
-1.5
-2.0
200
°
TJ = 25°C
VBE(sat) @ IC/IB =10
VCE(sat) @ IC/IB =10
VBE @ VCE =1.0 V
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
VC FOR VCE(sat)
VB FOR VBE(sat)
TO−92 (TO−226) 1 WATT
CASE 29−10
ISSUE A
DATE 08 MAY 2012
STYLES ON PAGE 2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
V C
D
N
N
X X
1
SCALE 1:1
1 2 3
1
2
STRAIGHT LEAD BENT LEAD
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN
DIMENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
B
K
G
SECTION X−X
C V
D
N
X X
SEATING
PLANE
1
T
STRAIGHT LEAD
BENT LEAD
DIM MIN MAX MIN MAX
INCHES MILLIMETERS
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
D 0.018 0.021 0.46 0.53
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.018 0.024 0.46 0.61
K 0.500 — 12.70 —
L 0.250 — 6.35 —
N 0.080 0.105 2.04 2.66
P — 0.100 — 2.54
R 0.135 — 3.43 —
F
V 0.135 — 3.43 —
DIM MIN MAX MIN MAX
INCHES MILLIMETERS
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
D 0.018 0.021 0.46 0.53
G 0.094 0.102 2.40 2.80
J 0.018 0.024 0.46 0.61
K 0.500 — 12.70 —
N 0.080 0.105 2.04 2.66
P — 0.100 — 2.54
R 0.135 — 3.43 —
V 0.135 — 3.43 —
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
DOCUMENT NUMBER: 98AON52857E
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO−92 (TO−226) 1 WATT PAGE 1 OF 2
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
TO−92 (TO−226) 1 WATT
CASE 29−10
ISSUE A
DATE 08 MAY 2012
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 6:
PIN 1. GATE
2. SOURCE & SUBSTRATE
3. DRAIN
STYLE 11:
PIN 1. ANODE
2. CATHODE & ANODE
3. CATHODE
STYLE 16:
PIN 1. ANODE
2. GATE
3. CATHODE
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
STYLE 26:
PIN 1. VCC
2. GROUND 2
3. OUTPUT
STYLE 31:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. GATE
3. MAIN TERMINAL 2
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
STYLE 27:
PIN 1. MT
2. SUBSTRATE
3. MT
STYLE 32:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 8:
PIN 1. DRAIN
2. GATE
3. SOURCE & SUBSTRATE
STYLE 13:
PIN 1. ANODE 1
2. GATE
3. CATHODE 2
STYLE 18:
PIN 1. ANODE
2. CATHODE
3. NOT CONNECTED
STYLE 23:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 28:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 33:
PIN 1. RETURN
2. INPUT
3. OUTPUT
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 9:
PIN 1. BASE 1
2. EMITTER
3. BASE 2
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
STYLE 19:
PIN 1. GATE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. EMITTER
2. COLLECTOR/ANODE
3. CATHODE
STYLE 29:
PIN 1. NOT CONNECTED
2. ANODE
3. CATHODE
STYLE 34:
PIN 1. INPUT
2. GROUND
3. LOGIC
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
STYLE 20:
PIN 1. NOT CONNECTED
2. CATHODE
3. ANODE
STYLE 25:
PIN 1. MT 1
2. GATE
3. MT 2
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
STYLE 35:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
DOCUMENT NUMBER: 98AON52857E
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO−92 (TO−226) 1 WATT PAGE 2 OF 2
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
www.onsemi.com
1
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